Effect of carbon sources on silicon carbon nitride films growth in an electron cyclotron resonance plasma chemical vapor deposition reactor

The effect of carbon source on SiCN film growth;th was studied in an electr on cyclotron resonance plasma chemical vapor deposition reactor. The growth characteristics of CH4, C2H2 and CH3NH2 were examined with and without H-2 addition during growth. The results indicated that SiCN films were deposit ed successfully using CH4 with H-2 addition as well as using CH3NH2 both wi th and without H-2 addition. (Si; C) and N composition ratios of the films thus deposited were around 0.75. Carbon was hardly incorporated into the fi lms when deposited using C2H2 as the source gas regardless of H-2 addition during growth. Among the three source gas studied, CH3N2 was the most effec tive for the SiCN films growth. Spectroscopic study of the gas phase specie s during growth and discussion on the growth phenomena are presented in thi s paper. (C) 2000 Elsevier Science S.A. All rights reserved.