In situ deposition and etching process of a-C : H : N films in a dual electron cyclotron resonance-radio frequency plasma

Authors
Hong, JG Granier, A Goullet, A Turban, G
Citation
Jg. Hong et al., In situ deposition and etching process of a-C : H : N films in a dual electron cyclotron resonance-radio frequency plasma, DIAM RELAT, 9(3-6), 2000, pp. 573-576
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
9
Issue
3-6
Year of publication
2000
Pages
573 - 576
Database
ISI
SICI code
0925-9635(200004/05)9:3-6<573:ISDAEP>2.0.ZU;2-D
Abstract
Hydrogenated amorphous carbon nitride (a-C:H:N) films were deposited at low pressure (2.6 mTorr) by plasma enhanced chemical vapor deposition in a dua l electron cyclotron resonance-radio frequency discharge from CH4/N-4 mixtu res. Competitive deposition and etching process in CH4/N-2 plasma was obser ved by means of both in situ kinetic ellipsometry and optical emission spec troscopy. X-ray photoemission spectroscopy confirmed the presence of differ ent bonding states between carbon and nitrogen at the film surface. The bul k optical properties of deposited films were also investigated by Fourier t ransform infrared spectroscopy, Raman spectroscopy and spectroscopic ellips ometry. (C) 2000 Elsevier Science S.A. All rights reserved.