Electron-beam-induced currents on beryllium-doped cubic boron nitride single crystal

The electrical properties of a beryllium-doped cubic boron nitride (c-BN) s ingle crystal grown on (111) diamond were investigated by using electron-be am-induced current measurements as well as current-voltage (I-V) and capaci tance-voltage measurements. The I-V measurements through silver electrodes on c-BN showed non-linear characteristics, revealing Schottky behavior. Fro m the temperature dependence of resistivity, the activation energy of 0.24 eV was obtained. We observed electronbeam-induced currents under the silver electrode, which means that a depletion region was formed due to the Schot tky barrier. The diffusion length of minority carriers was determined by sc anning the electron beam across the Schottky contact. The transient current after the electron-beam pulse was also measured at various temperatures. ( C) 2000 Elsevier Science S.A. All rights reserved.