RF plasma selective etching of boron nitride films

In the paper we have discussed the possibilities of dry RF (13.56 MHz) plas ma etching of nanocrystalline cubic boron nitride (BN) films. 110 nm thick BN layers were deposited on Si substrates by means of the reactive pulse pl asma CVD method and then locally covered with Al metallization playing the role of a mask. Subsequently, samples were exposed to the influence of Ar, CH4 and Ar + CH4 RF plasma environments. In general, the material was more efficiently removed at higher negative self-bias potentials between electro des. The best results were obtained when BN layers were etched in plasma in duced in an Ar + CH4 mixture, i.e. in the course of a physico-chemical proc ess. (C) 2000 Elsevier Science S.A. All rights reserved.