Development of DLC film technology for electronic application

Citation
Am. Baranov et al., Development of DLC film technology for electronic application, DIAM RELAT, 9(3-6), 2000, pp. 649-653
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
9
Issue
3-6
Year of publication
2000
Pages
649 - 653
Database
ISI
SICI code
0925-9635(200004/05)9:3-6<649:DODFTF>2.0.ZU;2-W
Abstract
The issues related to the development of a carbon film technology for micro electronic applications are considered in this paper. To this end, carbon f ilms deposited by plasma assisted chemical vapour deposition (PACVD) and by magnetron sputtering of a graphite target are analysed comparatively. A gr eat deal of information about them is shown to be gained by combining two a nalytical methods. On the one hand, in situ X-ray reflectivity (XRR) allows us to monitor, in real time: parameters such as thickness, density and sur face roughness of the growing film. On the other hand, ex situ X-ray photoe lectron spectroscopy (XPS) provides knowledge about the chemical compositio n and the electronic structure of the film surface region. Combination of s uch complementary analytical techniques results in a powerful tool for the development of the required technology to enable the use of diamond-like ca rbon (DLC) films in microelectronics devices. (C) 2000 Elsevier Science S.A . All rights reserved.