Characterization of DLC : Si films by the gas effusion technique

Citation
Ss. Camargo et al., Characterization of DLC : Si films by the gas effusion technique, DIAM RELAT, 9(3-6), 2000, pp. 658-662
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
9
Issue
3-6
Year of publication
2000
Pages
658 - 662
Database
ISI
SICI code
0925-9635(200004/05)9:3-6<658:COD:SF>2.0.ZU;2-6
Abstract
In this work an investigation of hard DLC:Si films by the gas effusion tech nique is presented. Effusion of hydrogen, methane and higher hydrocarbons w as studied for films with silicon contents of up to 40 at%. Three major con tributions to the effusion spectra could be identified: (i) a desorption-li mited mechanism from the internal surfaces of a network of voids which coul d be observed even for large hydrocarbon molecules, indicating that low sil icon content material possesses a porous structure; (ii) a sharp peak relat ed to the abrupt graphitization of the films which dominates the spectra fo r hydrogen and methane effusion in the tow concentration range and is gradu ally shifted to high temperatures as the silicon content is increased; and (iii) a diffusion-limited mechanism that appears for high silicon content f ilms, suggesting that the films undergo a transition from porous to a relat ively compact structure. (C) 2000 Elsevier Science S.A. All rights reserved .