Studies of carbon ion self-implantation into hydrogenated amorphous carbonfilms

Citation
Rua. Khan et al., Studies of carbon ion self-implantation into hydrogenated amorphous carbonfilms, DIAM RELAT, 9(3-6), 2000, pp. 675-679
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
9
Issue
3-6
Year of publication
2000
Pages
675 - 679
Database
ISI
SICI code
0925-9635(200004/05)9:3-6<675:SOCISI>2.0.ZU;2-X
Abstract
The properties of polymer-like amorphous hydrogenated carbon thin films wit h low defect density have been studied. These films were implanted with car bon ions with a dose range of 10(12)-10(16) cm(-2). The purpose of the stud y is to investigate the effects of ion beam damage on this type of him. Opt ical absorption measurements observe a narrowing of the optical band gap, s uggesting the introduction of a large number of defect states subsequent to the implantation resulting in the broadening of the band tails, only after a threshold ion dose of 10(15) cm(-2). Nuclear reaction analysis suggests also a reduction in the hydrogen content of the him which coincides with fi lm thinning. (C) 2000 Elsevier Science S.A. All rights reserved.