Dielectric properties of RF plasma-deposited a-C : H and a-C : H : N films

Authors
Romanko, LA Gontar, AG Kutsay, AM Khandozko, SI Gorokhov, VY
Citation
La. Romanko et al., Dielectric properties of RF plasma-deposited a-C : H and a-C : H : N films, DIAM RELAT, 9(3-6), 2000, pp. 801-804
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
9
Issue
3-6
Year of publication
2000
Pages
801 - 804
Database
ISI
SICI code
0925-9635(200004/05)9:3-6<801:DPORPA>2.0.ZU;2-J
Abstract
The effect of deposition parameters on the dielectric properties of a-C:H a nd a-C:H:N films deposited from an RF-discharge plasma (13.56 MHz) is discu ssed. The dielectric constant of films deposited at the lowest RF-discharge power is independent of the methane concentration in the gas mixture and i ncreases with increasing RF-discharge power. The introduction of nitrogen i nto a working gas mixture results in an increase of the dielectric constant . Films are characterized by a frequency dependence of dielectric propertie s in the 10(4)-10(7) Hz range. (C) 2000 Elsevier Science S.A. All rights re served.