Microcrystalline diamond films by direct ion beam deposition

Citation
Jy. Feng et al., Microcrystalline diamond films by direct ion beam deposition, DIAM RELAT, 9(3-6), 2000, pp. 872-876
Citations number
27
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
9
Issue
3-6
Year of publication
2000
Pages
872 - 876
Database
ISI
SICI code
0925-9635(200004/05)9:3-6<872:MDFBDI>2.0.ZU;2-W
Abstract
Microcrystalline diamond films have been successfully synthesized by direct ion beam deposition. Low energy (60-200 eV) ions of hydrocarbon, argon and hydrogen generated in a Kaufman ion source were perpendicularly directed t o (100) silicon substrates pretreated by diamond powder scratching. Diamond particles of similar to 1 micron in size embedded in a matrix of amorphous carbon were obtained at an ion energy of 80 eV, a methane concentration of 1%, and a substrate temperature of 700 degrees C. The feature of diamond w as confirmed by Raman spectroscopy and X-ray diffraction. The mechanism of ion-induced formation of microcrystalline diamond was discussed. (C) 2000 E lsevier Science S.A. All rights reserved.