Lift-off technology for SiCUV detectors

Authors
Badila, M Brezeanu, G Millan, J Godignon, P Locatelli, ML Chante, JP Lebedev, A Lungu, P Dinca, G Banu, V Banoiu, G
Citation
M. Badila et al., Lift-off technology for SiCUV detectors, DIAM RELAT, 9(3-6), 2000, pp. 994-997
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
9
Issue
3-6
Year of publication
2000
Pages
994 - 997
Database
ISI
SICI code
0925-9635(200004/05)9:3-6<994:LTFSD>2.0.ZU;2-0
Abstract
A silicon carbide Schottky UV detector technology is proposed. The Au Schot tky contact is delimited using lift-off technology. The contact window was open into a sandwich of SiO2 oxides in order to produce a small angle ramp that constitutes the dielectric part of the Schottky diode termination. The I-V and C-V characteristics measured under dark and illuminated UV irradia tion conditions indicate a significant sensitivity with UV radiation. (C) 2 000 Elsevier Science S.A. All rights reserved.