Microelectrical characterisation of diamond films: an attempt to understand the structural influence on electrical transport phenomena

Citation
L. Pereira et al., Microelectrical characterisation of diamond films: an attempt to understand the structural influence on electrical transport phenomena, DIAM RELAT, 9(3-6), 2000, pp. 1061-1065
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
9
Issue
3-6
Year of publication
2000
Pages
1061 - 1065
Database
ISI
SICI code
0925-9635(200004/05)9:3-6<1061:MCODFA>2.0.ZU;2-T
Abstract
The properties of microelectrical conduction in microwave plasma assisted c hemical vapour deposition (MPCVD) diamond films were investigated using an atomic force microscopy probe, giving a morphological map of the electrical conduction with a spatial resolution better than 500 nm. Also, a cathodolu minescence map with a spatial resolution of about 1 mu m was obtained, givi ng the possibility of correlating the defects involved in the different car rier transport phenomena. Using micro-Raman analysis several bands could be identified. It is found that the defects responsible for the cathodolumine scence (CL) blue band are responsible for the major part of the electrical conduction in diamond films, while the defects localised in < 111 > surface s, responsible for the green CL emission, could be involved in a less condu ctive process. (C) 2000 Elsevier Science S.A. All rights reserved.