Electronic properties of diamond surfaces - blessing or curse for devices?

For the potential electronic applications of diamond as a wide band gap sem iconductor, the properties of its surfaces are of fundamental importance. T hese properties in general depend on the kind of passivation of the surface dangling bonds, either by chemisorbed adsorbates or by the formation of mu tual chemical bonds as a consequence of surface reconstruction. The princip al crystallographic surfaces, (100), (111) and (110), are essentially under stood in their adsorbate free form in terms of surface states and reconstru ctions. The corresponding results are briefly summarized in Section 2. The consequences of adsorbate passivation are then discussed for the case o f hydrogen as the most important radical for surface termination with empha sis on different aspects. Hydrogen passivation leads to a negative electron affinity due to a dipole layer which is induced by the heteropolar carbon- hydrogen bonds of the surface atoms. This aspect is discussed quantitativel y in Section 3. Hydrogenation also reduces the amount of sp(2) bonded carbo n at the surface, which turns out to be the crucial parameter determining t he position of the surface Fermi level and thus the surface band bending in diamond. This aspect is covered in Section 4. Finally, the combination of the electron affinity reduction by hydrogen and the supply of electrons at the Fermi level by sp(2) bonded carbon phases has important consequences fo r the low threshold electron emission into vacuum. This is dealt with in th e framework of an inhomogeneous emission model in Section 5. The model can be expected to be applicable for all system containing sp(2) bonded or grap hitic phases together with an sp(3) bonded diamond matrix, especially for C VD diamond, and it should have important implications also for field emissi on from diamond films. (C) 2000 Elsevier Science S.A. All rights reserved.