Interaction of organo-sulfur compounds with CVD diamond surfaces

The interaction of diethylsulfide (DES) with atomically clean diamond surfa ces prepared by chemical vapour deposition (CVD) has been studied, in order to gain chemical insight into the use of this compound as a precursor for sulfur deposition and on the chemistry of sulfur at diamond surfaces. DES i s found to display a negligible reactive sticking probability on diamond in the temperature range from room temperature to 900 degrees C. When thermal ly activated using a hot filament, the efficient deposition of both sulfur and hydrocarbon species is observed. Very facile diffusion of sulfur away f rom the surface into the bulk of the film is seen at comparatively low temp eratures (similar to 500 degrees C), suggesting that this is associated wit h diffusion via grain boundaries. (C) 2000 Elsevier Science S.A. All rights reserved.