The interaction of diethylsulfide (DES) with atomically clean diamond surfa
ces prepared by chemical vapour deposition (CVD) has been studied, in order
to gain chemical insight into the use of this compound as a precursor for
sulfur deposition and on the chemistry of sulfur at diamond surfaces. DES i
s found to display a negligible reactive sticking probability on diamond in
the temperature range from room temperature to 900 degrees C. When thermal
ly activated using a hot filament, the efficient deposition of both sulfur
and hydrocarbon species is observed. Very facile diffusion of sulfur away f
rom the surface into the bulk of the film is seen at comparatively low temp
eratures (similar to 500 degrees C), suggesting that this is associated wit
h diffusion via grain boundaries. (C) 2000 Elsevier Science S.A. All rights
reserved.