Field emission properties of single-walled carbon nanotubes (SWNTs), deposi
ted on n-type Si substrates, were investigated by a combination of classica
l I-V characterization and field emission energy distribution (FEED) measur
ements. I-V characterization showed that current densities on the order of
1 mA/cm(2) could be obtained at nominal electric fields as low as 3 V/mu m.
A current density of up to 25 mA/cm(2) was observed, and long-term current
stability and reproducibility were excellent. FEED measurements revealed t
hat at low current densities, the field emitted electrons originated from e
nergy levels close to the Fermi level of the Si substrate. At larger applie
d voltages and larger current densities, I-V characterization of the field
emitters showed primarily an ohmic behavior; FEED data taken under the same
experimental conditions showed a shift of the main spectral peak toward lo
wer kinetic energies with increasing applied voltages. This energy shift wa
s found to be linear with the applied voltage and emission current over a w
ide range. Both FEED and I-V data thus indicated that the field emission cu
rrent was primarily limited by the ohmic resistance of the nanotubes and/or
the contact resistance between the nanotubes and the Si substrate; typical
measured values for the cathode surface resistances were 100 k Omega cm(2)
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