Field emission controlled by the substrate/CVD diamond interface

Authors
Koenigsfeld, N Philosoph, B Kalish, R
Citation
N. Koenigsfeld et al., Field emission controlled by the substrate/CVD diamond interface, DIAM RELAT, 9(3-6), 2000, pp. 1218-1221
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
9
Issue
3-6
Year of publication
2000
Pages
1218 - 1221
Database
ISI
SICI code
0925-9635(200004/05)9:3-6<1218:FECBTS>2.0.ZU;2-N
Abstract
Extremely low(similar to 1 V/mu m) turn-on-fields have been measured for B- doped CVD diamond films deposited on n-type Si substrates roughened with di amond slurry. No such low turn-on fields are found when the B-doped diamond layer is deposited on p-type Si on metal or on n-type Si that has not been roughened. The results are attributed to the presence of micro-protrusions from the n-Si into the p-diamond layer, which enhance the electron injecti on into the diamond. (C) 2000 Elsevier Science S.A. All rights reserved.