Electron stimulated desorption from oxygenated and hydrogenated synthetic diamond films

Thin polycrystalline B-doped diamond films on Si, prepared by microwave pla sma chemical vapour deposition, were diagnosed by means of secondary electr on emission measurements. Investigations, including caesium deposition. wer e carried out on a hydrogen and an oxygen-terminated sample cut from the sa me wafer. Caesiation resulted in a mean secondary electron emission factor <delta degrees> at a primary electron energy E-P = 1800 eV equal to 76 and 63 on the H- and O-terminated sample, respectively. Due to electron stimula ted desorption, the secondary emission decreased to <delta degrees> approxi mate to 45 on both samples under irradiation to a level of similar to 1 C/c m(2). On the caesiated samples the reduction of delta* with electron dose w as not local, but occurred over the whole surface because of the diffusion of Cs to the irradiated spot. (C) 2000 Elsevier Science S.A. All fights res erved.