Dependence of deposition characteristics by copper chemical vapor deposition on gas flow shape

When copper interconnection is applied in practical ULSI devices, it is req uired to fill holes and trenches with high aspect ratios with copper. A hig h deposition rate of 100 nm/min as well as complete gap filling at an aspec t ratio of 3 was obtained in deposition of copper by chemical vapor deposit ion. We evaluated three types of CVD chamber configuration. In this work, t he deposition rate and the filling property were found to be regulated by t he gas velocity very near the substrate surface. High-speed gas flow over t he substrate surface can be realized with a suitable chamber configuration, which results in high deposition rate, good uniformity, and a high consump tion rate of the source. (C) 2000 Scripta Technica.