Citation
H. Kim et al., Electromigration-induced failure of GaN multi-quantum well light emitting diode, ELECTR LETT, 36(10), 2000, pp. 908-910
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194
→ ACNP
Volume
36
Issue
10
Year of publication
2000
Pages
908 - 910
Database
ISI
SICI code
0013-5194(20000511)36:10<908:EFOGMW>2.0.ZU;2-L
Abstract
The reliability characteristics of a multi-quantum well (MQW) GaN/InGaN lig
ht emitting diode (LED) under various stress current densities have been in
vestigated. Based on the contact electromigration failure model of a silico
n device, the lifetime of the LED device under normal operating current con
dition can be obtained from the relation t(f) = C/I-n.