Expansion of effective channel width for MOSFETs defined by novel T-shapedshallow trench isolation fabricated with SiON spacers and liners

Authors
Shiozawa, K Oishi, T Abe, Y Tokuda, Y
Citation
K. Shiozawa et al., Expansion of effective channel width for MOSFETs defined by novel T-shapedshallow trench isolation fabricated with SiON spacers and liners, ELECTR LETT, 36(10), 2000, pp. 910-912
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
10
Year of publication
2000
Pages
910 - 912
Database
ISI
SICI code
0013-5194(20000511)36:10<910:EOECWF>2.0.ZU;2-P
Abstract
A new fabrication process for realising T-shaped shallow trench isolation b y the use of SiON spacers and liners is presented. This technique makes it possible to significantly increase the effective channel width of a metal o xide semiconductor field effect transistor, enhancing its drivability toget her with improving its subthreshold characteristics, without degrading fund amental isolation characteristics.