Gate-voltage dependence of low-frequency noise in GaN/AlGaN heterostructure field-effect transistors

The gate-voltage dependence of low-frequency noise in GaN/AlGaN heterostruc ture field-effect transistors has been investigated in the linear and subsa turation regions. Analysis of experimental data for different transistors i ndicates that for all examined biases the noise spectrum is dominated by th e channel noise rather than noise originating in the series resistors. The obtained results shed new light on the noise sources and may lead to improv ements in the noise performance of GaN transistors.