We used laser-induced decomposition of silane for the fabrication of nanosi
zed Si particles and studied in detail their structural characteristics by
conventional and high resolution electron microscopy. The silane gas flow r
eactor incorporated in a molecular beam apparatus was operated without size
selection to achieve a broad size distribution. Deposition at low energy o
n carbon substrates yielded single crystalline, spherical Si particles almo
st completely free of planar lattice defects. The particles, covered by thi
n amorphous oxide shells, are not agglomerated into larger aggregates. The
lattice of diamond cubic type exhibits deviations from the bulk spacing whi
ch vary from distinct contraction to dilatation as with decreasing particle
size the oxide shell thickness is reduced. This effect is discussed in ter
ms of the strong Si/oxide interfacial interaction and compressive stresses
arising upon oxidation. A negative interface stress, as determined from the
size dependence of the lattice spacing, limits the curvature of the interf
ace, i.e., at small sizes Si oxidation must be considered as a self-limitin
g process.