Simulation of the submonolayer homoepitaxial clusters growth on Ag(110)

Citation
C. Mottet et al., Simulation of the submonolayer homoepitaxial clusters growth on Ag(110), EUR PHY J D, 9(1-4), 1999, pp. 561-564
Citations number
17
Categorie Soggetti
Physics
Journal title
EUROPEAN PHYSICAL JOURNAL D
ISSN journal
14346060 → ACNP
Volume
9
Issue
1-4
Year of publication
1999
Pages
561 - 564
Database
ISI
SICI code
1434-6060(199912)9:1-4<561:SOTSHC>2.0.ZU;2-E
Abstract
The submonolayer growth of Ag/Ag(110) is studied by kinetic Monte Carlo sim ulations including deposition, diffusion, and fully reversible aggregation with both anisotropic diffusion barriers and anisotropic bond energies. The barriers for the elementary diffusion processes, including the Schwoebel b arrier at step borders, are calculated by many-body tight-binding potential s. Depending on growth conditions (temperature T, adatom flux F; and covera ge theta) the model shows morphology transitions to one-dimensional (1D) in -channel strips and then to 2D or 3D compact islands. At low T, the island density n(I) versus theta shows the nucleation, growth (at saturation densi ty), and the coalescence regimes, whereas at higher T, at which point detac hment from islands becomes effective, n(I) presents a maximum at very low t heta, followed by a decrease, at first caused by island dissolution and the n, for higher B, by coalescence.