We have investigated formation characteristics of stable hydrogenated Si cl
uster ions, SinHx+, for deposition on solid substrates. The SinHx+ clusters
were grown from silane gas in an ion trap developed for cluster growth, an
d transported to the solid substrate through an electrostatic quadrupole de
flector. Several kinds of the clusters (n = 4 - 10) were grown and transpor
ted to the solid substrate. Among them, Si6H13+ hsd the largest population
under the optimized conditions. When the Si6H13+ cluster ion beam was focus
ed to less than 3 mm in diameter on the solid substrate with a deposition e
nergy of 3 eV/Si atom, the beam current obtained was more than 30 pA, which
is in the range useful for observation of cluster adsorption structures on
solid surfaces.