RuO2/GaN Schottky contact formation with superior forward and reverse characteristics

This is a first time report of a ruthenium oxide (RuO2) Schottky contact on GaN, RuO2 and Pt Schottky diodes were fabricated and their characteristics compared. When the RuO2 Schottky contact was annealed at 500 degrees C for 30 min, the current-voltage (I-V) and capacitance-voltage (C-V) characteri stics of the RuO2 were dramatically improved. The annealed RuO2/GaN Schottk y contact exhibited a reverse leakage current that was at least two or thre e orders lower in magnitude than that of the Pt/GaN contact along with a ve ry large barrier height of 1.46 eV, which is the highest value ever reporte d for a GaN Schottky system.