Selective emitters in Si by single step rapid thermal diffusion for photovoltaic devices

Selective phosphorous diffusion is performed in Si to simultaneously form s hallow n(+) p junctions of different depths in the submicron range by rapid thermal annealing (RTA), Low temperature (400 degrees C) atmospheric press ure chemical vapor deposited (APCVD) phosphosilicate glass (PSG) is used as diffusion source, A wide range of n(+) p junctions could be tailored with the same thermal budget by changing only the APCVD-PSG composition. This al lows the formation of selectively diffused emitters in different regions of the wafer in one RTA step, 10 cm x 10 cm Cz-Si selective emitter photovolt aic (PV) devices are fabricated this way with high energy conversion effici encies in the range of 17% to 18%.