A fully planarized 4H-SiC trench MOS barrier Schottky (TMBS) rectifier

A fully planarized 4H-SiC trench MOS barrier Schottky (TMBS) rectifier has been designed, fabricated and characterized for the first time. The use of a TMBS structure helps improve the reverse leakage current by more than thr ee orders of magnitude compared to that of a planar Schottky rectifier. We have achieved a low reverse leakage current density of 6 x 10(-6) A/cm(2) a nd a tow forward voltage drop of 1.75 V at 60 A/cm(2) for the TMBS rectifie r. The static current-voltage (I-V) and switching characteristics of the TM BS rectifier have been measured at various temperatures. A barrier height o f 1.0 eV and an ideality Factor of 1.8 were extracted from the forward char acteristics. The switching characteristics do not change with temperature i ndicating the essential absence of stored charge.