Programming characteristics of P-channel Si nano-crystal memory

In this work, the programming characteristics of p-channel nano-crystal mem ory is studied. The hole tunneling component from the inversion layer and t he electron tunneling component from the valence band in the nano-crystal w ere separated successfully by independent measurement of the current at the body terminal and at the source/drain terminal of the memory. For small ga te voltage, the hole tunneling current is dominant during programming. Howe ver, for large programming voltage, the valence band electron tunneling fro m the dot into the substrate becomes dominant. Finally, the comparison of r etention characteristics between programmed holes and electrons shows that holes have longer retention time.