High performance sub-0.25 mu m devices using ultrathin oxide-nitride-oxidegate dielectric formed with low pressure oxidation and chemical vapor deposition

An ultra-thin, high reliability oxide-nitride-oxide (ONO) gate dielectric w as formed using low pressure oxidation and chemical vapor deposition. A sub -0.25 mu m device with high performance was fabricated whose gate dielectri c reliability was studied using both Fowler-Nordheim tunneling stress and h ot carrier aging. The results from both techniques demonstrate that the dev ice lifetime is longer than 100 years. Auger spectroscopy shows that there is about 9 atomic % nitrogen at the SiO2/Si interface. However, no transcon ductance degradation is observed.