Integrated GaAs Schottky mixers by spin-on-dielectric wafer bonding

A novel wafer bonding process has been used to integrate high quality GaAs devices on quartz substrates. The method of adhesion by spin-on-dielectric temperature enhanced reflow (MASTER) uses a spin-on-dielectric as a bonding agent to achieve a robust bond that in no way degrades either high frequen cy performance or reliability, A 585 GHz integrated mixer fabricated using this process has achieved record double-sideband mixer :noise-temperatures of 1 150 K at room temperature and 880 K at 77 K. Furthermore, the integrat ed mixers require no mechanical tuning, are easy to assemble, and repeatabl e. Precise control of the circuit geometry, coupled with the reduction of p arasitic elements, allows greater accuracy of computer simulations and will therefore lead to better high frequency performance and bandwidth. This ne w technology is easily extended to other circuit designs and will allow the development of a new generation of submillimeter-wave integrated circuits.