Novel source-controlled self-verified programming for multilevel EEPROM's

In this work, a new source-controlled self-verified (SCSV) programming meth od for multilevel storage in EEPROM is discussed. Multilevel storage is a c ost-effective approach to improve storage capacity and reduce bit-cost, How ever, the reduced interlevel margin impacts the reliability and available e ndurance. The new SCSV programming approach using simultaneous programming and verification can control threshold voltages by:different source voltage s. Linear relationship between threshold voltage and source voltage is obta ined. Furthermore, the endurance of multilevel storage is extended up to 10 (6) cycles. The accurate control of threshold voltage improves the reliabil ity of multilevel EEPROM's. Therefore, the SCSV programming approach is a p romising technique for future high-density and low-cost EEPROM applications .