On the reverse short channel effect in deep submicron heterojunction MOSFET's and its impact on the current-voltage behavior

In this paper, we report on the reverse short channel effect (RSCE) in vert ical heterojunction MOSFET's, which use a source/channel heterojunction for reduction of the short channel effect (SCE) in deep submicron devices. The study shows that a typical RSCE will occur when the heterobarrier dominate s the channel potential and when the barrier is strong enough to shift the potential maximum (pMOS) or minimum (nMOS) toward the source/channel interf ace. The particular channel potential for these devices will give rise to a current-voltage (I-V) behavior which:deviates from the classical linear or saturation regime for homojunction devices. A distinctive "transition zone " needs to be taken into account.