Approach to electrochemical C-V profiling in semiconductor with sub-Debye-length resolution

Three methods for determination of a detailed structure of dopant distribut ion in semiconductors, based on the data of electrochemical G-V profiling a re proposed, The methods give a possibility to determine a dopant distribut ion directly from a semiconductor surface and provide a sub-Debye length re solution. The results of numerical simulation confirm a possibility of dete rmination of semiconductor dopant profile with a nanometer depth resolution .