Monte Carlo study of sub-0.1 mu m Si0.97C0.03/Si MODFET: Electron transport and device performance

Authors
Dollfus, P Galdin, S Hesto, P Velazquez, JE
Citation
P. Dollfus et al., Monte Carlo study of sub-0.1 mu m Si0.97C0.03/Si MODFET: Electron transport and device performance, IEEE DEVICE, 47(6), 2000, pp. 1247-1250
Citations number
17
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
47
Issue
6
Year of publication
2000
Pages
1247 - 1250
Database
ISI
SICI code
0018-9383(200006)47:6<1247:MCSOSM>2.0.ZU;2-J
Abstract
We study the electron transport in tensile strained Si1-yCy pseudomorphical ly grown on Si(100) substrate, and in n-channel short gate Si1-yCy/Si MODFE T's using an ensemble Monte Carlo simulation. The alloy potential in Si1-yC y is used as a parameter, ranging from 0 to 2 eV, When the alloy scattering reduces drastically the intrinsic transport properties in Si1-yCy alloys, the nonstationary transport occurring in ultrashort gate MODFET's decreases the influence of scattering processes. The device performance can then ful ly benefit from the strain-induced reduction of effective mass.