Modeling of SILC based on electron and hole tunneling - Part II: Steady-state

A numerical model for the stationary stress-induced leakage current (SILC) is presented, accounting for both electron and hole tunneling. Detailed com parisons against experimental results on both n- and p-channel devices high light that the steady-state SILC is due to positively charged centers, with an energy level located in correspondence of the silicon bandgap, Electron -hole recombination at these sites dominates on normal trap-assisted tunnel ing at low oxide fields, and successfully accounts for recently observed ho le steady-state leakage. The contribution from neutral traps seems instead marginal. Based on this new picture, the impact of the recombination proces s on the leakage properties of ultrathin gate is also discussed.