Simplified method to investigate quantum mechanical effects in MOS structure inversion layer

Authors
Ma, YT Liu, LT Yu, ZP Li, ZJ
Citation
Yt. Ma et al., Simplified method to investigate quantum mechanical effects in MOS structure inversion layer, IEEE DEVICE, 47(6), 2000, pp. 1303-1305
Citations number
11
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
47
Issue
6
Year of publication
2000
Pages
1303 - 1305
Database
ISI
SICI code
0018-9383(200006)47:6<1303:SMTIQM>2.0.ZU;2-H
Abstract
A simplified method to calculate the band bending and subband energies is e mployed to investigate quantum mechanical effects (QME's) in MOS structure inversion layer. The subband structure and the two-dimensional (2-D) densit y-of-states in semi-classical and quantum mechanical cases art: then calcul ated. The well-known band gap widening model is analyzed through a density- uf-states point of view and a new scheme to analysis and modeling QME's in MOS inversion layer is proposed.