The influence of stud bumping above the MOSFETs on device reliability

This paper presents the effect of stress on device degradation in metal-oxi de-semiconductor field-effect transistors (MOSFETs) due to stud bumping. St ud bumping above the MOSFET region generates interface traps at the Si/SiO2 interface and results in the degradation of transconductance in N-channel MOSFETs. The interface traps are apparently eliminated by both nitrogen and hydrogen annealing. However, the hot-carrier immunity after hydrogen annea ling is one order of magnitude stronger than that after nitrogen annealing. This effect is explained by the termination of dangling bonds with hydroge n atoms.