FULLY DEPLETED SOI-CMOS TECHNOLOGY FOR HIGH-TEMPERATURE IC APPLICATIONS

Authors
GENTINNE B EGGERMONT JP FLANDRE D COLINGE JP
Citation
B. Gentinne et al., FULLY DEPLETED SOI-CMOS TECHNOLOGY FOR HIGH-TEMPERATURE IC APPLICATIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 1-7
Citations number
10
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
46
Issue
1-3
Year of publication
1997
Pages
1 - 7
Database
ISI
SICI code
0921-5107(1997)46:1-3<1:FDSTFH>2.0.ZU;2-U
Abstract
Thin-film fully depleted complementary metal oxide semiconductor (CMOS ) silicon-on-insulator (SOI) technology is currentlly considered as th e best mature contender for high-temperature analog or mixed-mode IC a pplications in the 200-400 degrees C temperature range. This is demons trated by measurement results of the high-temperature performances of several operational transconductance amplifiers (OTA) with increasing architecture complexity. High-temperature design techniques are also p roposed and validated by measurements. (C) 1997 Elsevier Science S.A.