INDEPENDENT IMPLANT PARAMETER EFFECTS ON SIMOX SOI DISLOCATION FORMATION

Separation by implanted oxygen (SIMOX) material has proven to provide an extended temperature range (up to 500 degrees C) of operation for p artially depleted silicon-on-insulator (SOI) test structures and produ ct circuits in both transportation and communication applications. Suc h high temperature use is possible due to the built-in dielectric isol ation which eliminates the isolation junction and its associated leaka ge. In order to further improve high temperature performance, material quality must be ever improving, This study examines the independent i mplant parameter effects of implant energy, implant temperature, and b eam current density on the silicon threading dislocation density in st andard and thin buried oxide (BOX) SIMOX material. We have found that increased implant energies and a slightly lower beam current will impr ove the dislocation density by at least an order of magnitude. The kin etics of vacancy formation as it relates to the above parameters an pr esented. (C) 1997 Elsevier Science S.A.