ANALYSIS OF STRUCTURAL IMPERFECTIONS OF SILICON-ON-INSULATOR STRUCTURES

Authors
BEGHI MG BOTTANI CE GHISLOTTI G
Citation
Mg. Beghi et al., ANALYSIS OF STRUCTURAL IMPERFECTIONS OF SILICON-ON-INSULATOR STRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 20-23
Citations number
18
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
46
Issue
1-3
Year of publication
1997
Pages
20 - 23
Database
ISI
SICI code
0921-5107(1997)46:1-3<20:AOSIOS>2.0.ZU;2-V
Abstract
Silicon-on-insulator structures prepared using the separation by impla nted oxygen technology are studied by means of Brillouin light scatter ing. The deviation in the experimental wave velocity for modes guided within the SiO2 buried layer is ascribed to the presence of silicon in clusions dispersed in the oxide matrix. The presence of inclusions is taken into account by means of an effective medium theory which allows to determine the inclusion volume fraction and the anisotropy of thei r orientation. (C) 1997 Elsevier Science S.A.