SOI-STRUCTURES PRODUCED BY THE SILICON DIRECT BONDING METHOD

Complex investigations of silicon-on-insulator (SOI)-structures produc ed by silicon direct bonding have been carried out. The investigations have shown that the quality of the formed monolithic SOI-structures s trongly depends on the regimes of the low-temperature step. The optima l kinematics of the process of silicon surfaces contact at room temper ature has been determined. The measurements have shown that the surfac e states density at the Si-SiO2 interface and fixed charge in the oxid e for the SOI-structures are concordant with those of a thermal gate o xide. (C) 1997 Elsevier Science S.A.