HIGH TEMPERATURE HIGH POWER SCHOTTKY DIODES

Authors
WRIGHT NG ONEILL AG JOHNSON CM
Citation
Ng. Wright et al., HIGH TEMPERATURE HIGH POWER SCHOTTKY DIODES, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 57-60
Citations number
8
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
46
Issue
1-3
Year of publication
1997
Pages
57 - 60
Database
ISI
SICI code
0921-5107(1997)46:1-3<57:HTHPSD>2.0.ZU;2-O
Abstract
The high temperature performance of 100 and 300 V power GaAs Schottky diodes is compared to that of equivalent Al0.45Ga0.55As/GaAs heterostr ucture devices. Both types of devices are shown to be operational to s imilar to 250 degrees C, with reverse current densities of 0.1 A cm(-2 ) and 1 A cm(-2) at 250 degrees C for the 100 and 300 V GaAs devices r espectively. (C) 1997 Published by Elsevier Science S.A.