GAN BASED TRANSISTORS FOR HIGH-TEMPERATURE APPLICATIONS

We review theoretical and experimental results for GaN-based field eff ect transistors (FET) and discuss their potential for high temperature applications. We demonstrate that a decrease in ionized impurity scat tering with an increase in temperature makes AlGaN-GaN DC-HFET to be s uperior candidates for high temperature applications. In these devices , a large sheet carrier concentration in the device channel allows us to obtain a relatively low parasitic series resistance and to achieve superior de and ac performance (with the cutoff frequency times gate l ength product of 18.3 GHz x mu m demonstrated recently by our group at room temperature). (C) 1997 Elsevier Science S.A.