ELECTRICAL CHARACTERISTICS OF GAN 6H-SIC N-P HETEROJUNCTIONS/

Authors
KUZNETSOV NI GUBENCO AE NIKOLAEV AE MELNIK YV BLASHENKOV MN NIKITINA IP DMITRIEV VA
Citation
Ni. Kuznetsov et al., ELECTRICAL CHARACTERISTICS OF GAN 6H-SIC N-P HETEROJUNCTIONS/, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 74-78
Citations number
20
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
46
Issue
1-3
Year of publication
1997
Pages
74 - 78
Database
ISI
SICI code
0921-5107(1997)46:1-3<74:ECOG6N>2.0.ZU;2-D
Abstract
n-Type GaN layers of high crystalline quality have been grown on p-typ e 6H-SiC substrates by HVPE. The electronic properties of the n-p hete rojunctions indicate a typical diode behaviour. The turn-on voltage of the forward I-TI characteristic is about 2 V while the reverse charac teristic showing an abrupt breakdown at voltage close to 30 V. Using C -V measurements, the density of interface traps has been estimated to be 7 x 10(12) cm (-2). These interface traps limit the current transpo rt in the p-6H-SiC/n-GaN heterojunction. (C) 1997 Published by Elsevie r Science S.A.