PREPARATION OF BORON-NITRIDE THIN-FILMS BY MICROWAVE PLASMA-ENHANCED CVD, FOR SEMICONDUCTOR APPLICATIONS

Authors
BAEHR O THEVENIN P BATH A KOUKAB A LOSSON E LEPLEY B
Citation
O. Baehr et al., PREPARATION OF BORON-NITRIDE THIN-FILMS BY MICROWAVE PLASMA-ENHANCED CVD, FOR SEMICONDUCTOR APPLICATIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 101-104
Citations number
16
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
46
Issue
1-3
Year of publication
1997
Pages
101 - 104
Database
ISI
SICI code
0921-5107(1997)46:1-3<101:POBTBM>2.0.ZU;2-T
Abstract
Thin films of boron nitride (BN) have been deposited on silicon and in dium phosphide (InP) substrates at low temperature (approximate to 300 degrees C) using a microwave plasma CVD system. The source material i s molten borane-dimethylamine. The vapour was decomposed in a microwav e nitrogen and argon plasma. The index of refraction and the thickness of the films have been determined by ellipsometry. FTIR spectroscopy was used for a fast phase identification. The composition was analyzed by X-ray photoelectron spectroscopy (XPS). The electrical properties of the films were evaluated by capacitance-voltage (C-V) measurements of metal/BN/semiconductor (MIS) structures. From these results a minim um interface state density of 3.5 10(11) cm(-2) eV(-1) and a dielectri c constant of 5.2 have been deduced. (C) 1997 Elsevier Science S.A.