THIN-FILM DIAMOND METAL-INSULATOR FIELD-EFFECT TRANSISTOR FOR HIGH-TEMPERATURE APPLICATIONS

Authors
PANG LYS CHAN SSM CHALKER PR JOHNSTON C JACKMAN RB
Citation
Lys. Pang et al., THIN-FILM DIAMOND METAL-INSULATOR FIELD-EFFECT TRANSISTOR FOR HIGH-TEMPERATURE APPLICATIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 124-128
Citations number
18
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
46
Issue
1-3
Year of publication
1997
Pages
124 - 128
Database
ISI
SICI code
0921-5107(1997)46:1-3<124:TDMFTF>2.0.ZU;2-9
Abstract
A high temperature depletion-mode metal-insulator field effect transis tor (MISFET) has been fabricated from thin film polycrystalline diamon d with a p-type (boron doped) channel and an insulating diamond gate. This device was successfully operated at 300 degrees C with low gate l eakage currents, displaying pinch-off when in depletion and high level s of channel current modulation in enhancement. A transconductance val ue of 174 mu S mm(-1) has been measured, the highest reported value to date for this type of device. (C) 1997 Elsevier Science S.A.