COMPARISON OF THE ELECTRICAL AND OPTICAL-PROPERTIES OF 3C-SIC ON SOI FROM DIFFERENT ORIGIN

We report on 3C-SiC laters deposited on separation by implanted oxygen (SIMOX) substrates obtained from two different origins. In both cases , using X-ray diffraction measurements, we evidenced a good relaxation of the residual strain inside the SiC layer. However, from X-ray tran smission electron microscopy (XTEM) and infrared reflectivity measurem ents, we observed large cavities and Si islands located inside the bur ied oxide. Depending on the sample origin? they were in different amou nt. In spite of these structural defects we could evidence, from squar e resistance measurements, an improvement in the SiC layer insulation of approximately 100 degrees C when compared with SiC/Si. An upper lim it of 640 K was even reached for the sample which exhibits the best si licon-on-insulator (SOI) characteristics. (C) 1997 Published by Elsevi er Science S.A.