CHARACTERIZATION OF 3C-SIC DOPED BY NITROGEN IMPLANTATION

Doping by ion implantation, in addition to the introduction of dopants during material growth, is the only method available to obtain the re quired electronic activation in SiC and is also capable of providing a rea selective doping. Results presented here were obtained from implan tations of nitrogen in the energy range from 50 to 180 keV. Implantati ons were performed as single energy implants in order to allow a compa rison of the implanted profiles with theory. Theoretical profiles are calculated by Monte Carlo simulation using the TRIM code. Profiles fro m the simulation and secondary ion mass spectroscopy measurements were fitted using Pearson distributions. From this procedure the parameter s projected range, straggle, kurtosis and skewness were extracted. The projected ranges obtained vary almost linearly with implantation ener gy from 83 nm (50 keV) to 261 nm (180 keV). The activation of the impl anted impurities was measured by the Hall method. The influence of dif ferent implantation parameters on activation is discussed. (C) 1997 El sevier Science S.A.