6H-3C SIC STRUCTURES GROWN BY SUBLIMATION EPITAXY

Authors
LEBEDEV AA SAVKINA NS STRELCHUK AM TREGUBOVA AS SCHEGLOV MP
Citation
Aa. Lebedev et al., 6H-3C SIC STRUCTURES GROWN BY SUBLIMATION EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 168-170
Citations number
7
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
46
Issue
1-3
Year of publication
1997
Pages
168 - 170
Database
ISI
SICI code
0921-5107(1997)46:1-3<168:6SSGBS>2.0.ZU;2-F
Abstract
The objective of the present work was to prepare heterojunctions in th e 3C-6H system and to investigate their characteristics. The heteroepi taxy was carried out using sublimation epitaxy (SE) in an open system. The presence of 3C-SiC in the deposited structures was confirmed by X -ray diffraction. The p-n junction parameters were investigated from c urrent-voltage and capacitance-voltage measurements, electroluminescen ce spectrum and DLTS data. (C) 1997 Published by Elsevier Science S.A.