SIC MATERIAL FOR HIGH-POWER APPLICATIONS

SiC has long been known as a suitable material for high-power applicat ions. However, due to the poor material quality, it is not until recen tly that SiC has received proper attention. In order to realise high-p ower devices in SIG, thick epitaxial layers must be grown with a low d oping concentration and, in the bipolar case, with a long carrier life time. In addition to these requirements it is also very important that the morphology of the grown layers is good in order to obtain a reaso nable yield with comparatively large devices. In this paper we will de scribe one possible and promising way to produce these layers. We will also briefly mention the problems that remain to be solved and take a look into the near future in terms of epitaxial growth. (C) 1997 Else vier Science S.A.