MONTECARLO SIMULATION OF ION-IMPLANTATION INTO SIC-6H SINGLE-CRYSTAL INCLUDING CHANNELING EFFECT

An ion implantation simulator for single crystal 6H-SiC is presented. This simulator uses a Montecarlo method together with either physicall y based or semiempirical models to calculate the slowing down of the i ncoming ions in the crystal. Channeling effect, which appears not to b e negligible in SiC single crystal for standard ion implantation condi tions, arises naturally as a consequence of the crystal structure and valence electrons distribution. The effect of a native oxide, dynamica l amorphization and thermal vibration of the lattice atoms. which affe ct the channeling behavior of the ions. are also included in the simul ation. Recent models for electronic stopping are also used. After cali bration, the simulation profiles show good agreement with published SI MS profiles. (C) 1997 Elsevier Science S.A.